Institute for Foundational Studies
Hermann Minkowski

 
Hermann Minkowski
1864 - 1909


Home

Mission

Founders

Affiliated Members Research

News

Our Sponsors

Offered Courses

Hermann Minkowski

Links

Minkowski Institute Press

Spacetime Society

2016 Spacetime Conference

2008 Spacetime Conference

2006 Spacetime Conference

2004 Spacetime Conference

Louis Vervoort


    "Science is disbelief in what the experts say" (Richard Feynman)


Research interests within the Minkowski Institute:

Foundations of physics, philosophy of science, interdisciplinary creativity and innovation (theory and practice)

Email: louisvervoort@hotmail.com (preferred) or lvervoort@minkowskiinstitute.org



Selected articles in philosophy of science, of mind and foundations of physics


Selected articles in physics:

  • L. Vervoort, R. Ferreira, and P. Voisin, "Spin-splitting of the subbands of InGaAs-InP and other 'no common atom. quantum wells", Semiconductor Science & Technology 14 (1999) p. 227 http://iopscience.iop.org/0268-1242/14/3/004/pdf/0268-1242_14_3_004.pdf

  • Vinh Le Thanh, V. Yam, P. Boucaud, F. Fortuna, C. Ulysse, D. Bouchier, L. Vervoort and J.-M. Lourtioz, "Vertically self-organized Ge/Si(001) quantum dots in multilayer structures", Physical Review B 60 (1999) p. 5851

  • T. Guettler, A. Triques, L. Vervoort, R. Ferreira, Ph. Roussignol, P. Voisin, D. Rondi, and J. C. Harmand, "Optical polarization relaxation in InxGa1-xAs-based quantum wells: Evidence of the interface symmetry-reduction effect", Phys. Rev. B 58 (1998) p. 10180 (Rapid Communications) : http://prb.aps.org/abstract/PRB/v58/i16/pR10179_1

  • L. Vervoort, R. Ferreira, and P. Voisin, "Effects of interface asymmetry on hole subband degeneracies and spin-relaxation rates in quantum wells", Phys. Rev. B. 56 (1997) p. 12744 (Rapid Communications): http://prb.aps.org/abstract/PRB/v56/i20/pR12744_1

  • A. Filonov, A. Kholod, V. Novikov, V. Borisenko, L. Vervoort et al., Appl. Phys. Lett. 70 (1997) p. 744:
    http://apl.aip.org/resource/1/applab/v70/i6/p744_s1

  • F. Bassani, L.Vervoort et al., Thin Solid Films 279 (1997) p. 179 http://www.sciencedirect.com/science/article/pii/S0040609096094795

  • L. Vervoort, A. Saul, F. Bassani, F. Arnaud d'Avitaya, "The electronic energy levels of Si-based nanocrystalline materials: theory compared with experiment", Thin Solid Films 279 (1997) p. 163: http://www.sciencedirect.com/science/article/pii/S0040609096094771

  • F. Bassani, L. Vervoort, I. Mihalcescu, J. C. Vial, and F. Arnaud d'Avitaya, "Fabrication and Optical Properties of Si/CaF2(111) Multi-Quantum Wells", J. Appl. Phys. 79 (1996) p. 4066

  • S. Ossicini, A. Fasolino, F. Bernardini, F. Arnaud d'Avitaya, L. Vervoort et al, in Advanced Nonlinear Materials for Optics and Opto-electronics, ed. V. I. Pustovoy, SPIEE 2777 (1996) pp. 27-37

  • L. Vervoort et al., J. It. Vac. Soc. 14 (1996) p. 7

  • L. Vervoort, F. Bassani, I. Mihalcescu, J. C. Vial, F. Arnaud d'Avitaya, "Efficient Visible-Light Emission from Si/CaF2(111) Heterostructures Grown by Molecular Beam Epitaxy",
    Phys. Stat. Sol. (b) 190 (1995) p. 123

  • F. Arnaud d'Avitaya, L. Vervoort, F. Bassani, S. Ossicini, A. Fasolino and F. Bernardini, "Light Emission at Room Temperature from Si/CaF2 Multilayers", Europhys. Lett. 31 (1995) p. 25

  • F. Bassani, L. Vervoort et al. in Semiconductor Heteroepitaxy, ed. B. Gil and R.-L. Aulombard (World Scientific, Singapore, 1995) pp. 286-293

  • F. Arnaud d'Avitaya, F. Bassani, L. Vervoort et al. in Physics, Chemistry and Applications of Nanostructures, ed. V. E. Borisenko, A. B. Filonov (Belorussian Academic Press, Minsk, 1995) pp. 1-17.

  • I. Nikitin, M. Mengel, L. Vervoort, "Inkjet Printing of Metals and Polymers", Internal Report Infineon, Munich, Germany (2008)

  • L. Vervoort, "Calculation of UV Laser Light Scattering from Particles in Micron Range", Internal Report Carl Zeiss, Oberkochen, Germany (2003)


Patents:

  • 5 in total: list on request. (Some can be found by google patent: US Patent US Patent US7982309, US20090194882, US Patent US20110003440, US Patent US 2009/0032871A1)